In stock:
5
$32.88540
Standard Package:
30
| Quantity | Unit Price | |
|---|---|---|
| 1 | $32.88540 | |
| 30 | $31.40556 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for AIMW120R035M1HXKSA1
AIMW120R035M1HXKSA1
1200V COOLSIC MOSFET PG-TO247-3
Order Code:
CIS1455720
Manufacturer Part No:
AIMW120R035M1HXKSA1
Manufacturer:
Package / Case:
TO-247-3
Detailed Description:
N-Channel 1200 V 52A (Tc) 228W (Tc) Through Hole PG-TO247-3-41
Technical Datasheet:
Buy with Confidence
AIMW120R035M1HXKSA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | Automotive, AEC-Q101, CoolSiC™ |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3-41 |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 228W (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 25A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 18 V |
| Vgs (Max) | +23V, -7V |
| Input Capacitance (Ciss) (Max) @ Vds | 2130 pF @ 800 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |