In stock:
2
$33.71670
Standard Package:
30
Quantity | Unit Price | |
---|---|---|
1 | $33.71670 | |
200 | $13.04836 | |
500 | $12.58982 | |
1000 | $12.36391 |
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Request for AIMW120R080M1XKSA1
AIMW120R080M1XKSA1
1200V COOLSIC MOSFET PG-TO247-3
Order Code:
CIS1461357
Manufacturer Part No:
AIMW120R080M1XKSA1
Manufacturer:
Package / Case:
TO-247-3
Detailed Description:
N-Channel 1200 V 33A (Tc) 150W (Tc) Through Hole PG-TO247-3-41
Technical Datasheet:
AIMW120R080M1XKSA1 Information
Mfr | Infineon Technologies |
---|---|
Series | Automotive, AEC-Q101, CoolSiC™ |
Package | Tube |
Product Status | Active |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | PG-TO247-3-41 |
Technology | SiCFET (Silicon Carbide) |
FET Type | N-Channel |
Power Dissipation (Max) | 150W (Tc) |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Rds On (Max) @ Id, Vgs | 104mOhm @ 13A, 15V |
Vgs(th) (Max) @ Id | 5.7V @ 5.6mA |
Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 15 V |
Vgs (Max) | +20V, -7V |
Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 800 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |