Out of stock
$6.65210
Standard Package:
5000
Quantity | Unit Price | |
---|---|---|
1 | $6.65210 | |
200 | $2.57569 | |
500 | $2.48655 | |
1000 | $2.43999 |
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Request for BSF134N10NJ3 G
BSF134N10NJ3 G
N-CHANNEL POWER MOSFET
Order Code:
CIS1457464
Manufacturer Part No:
BSF134N10NJ3 G
Manufacturer:
Package / Case:
DirectFET™ Isometric MX
Detailed Description:
N-Channel 100 V 9A (Ta), 40A (Tc) 2.2W (Ta), 43W (Tc) Surface Mount MG-WDSON-2-2
Technical Datasheet:
BSF134N10NJ3 G Information
Mfr | Infineon Technologies |
---|---|
Series | OptiMOS™ |
Package | Bulk |
Product Status | Active |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | DirectFET™ Isometric MX |
Supplier Device Package | MG-WDSON-2-2 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 2.2W (Ta), 43W (Tc) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 13.4mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 40µA |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 50 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | Not applicable |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
REACH Status | REACH Unaffected |