In stock:
10
$2.64410
Standard Package:
5000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $2.64410 | |
| 10 | $2.30936 | |
| 30 | $2.11105 | |
| 100 | $1.90983 | |
| 500 | $1.81703 | |
| 1000 | $1.77498 |
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Request for BSG0810NDIATMA1
BSG0810NDIATMA1
MOSFET 2N-CH 25V 19A/39A 8TISON
Order Code:
CIS1455398
Manufacturer Part No:
BSG0810NDIATMA1
Manufacturer:
Package / Case:
8-PowerTDFN
Detailed Description:
Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 19A, 39A 2.5W Surface Mount PG-TISON-8
Technical Datasheet:
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BSG0810NDIATMA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | OptiMOS™ |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | PG-TISON-8 |
| Base Product Number | BSG0810 |
| Power - Max | 2.5W |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 19A, 39A |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040pF @ 12V |
| FET Feature | Logic Level Gate, 4.5V Drive |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |