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Request for BSP300H6327XUSA1

BSP300H6327XUSA1

MOSFET N-CH 800V 190MA SOT223-4

Order Code:
CIS1454255
Manufacturer Part No:
BSP300H6327XUSA1
Manufacturer:
Package / Case:
TO-261-4, TO-261AA
Detailed Description:
N-Channel 800 V 190mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Technical Datasheet:
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BSP300H6327XUSA1 Information

More Information
Mfr Infineon Technologies
Series SIPMOS®
Package Tape & Reel (TR)
Product Status Obsolete
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 1.8W (Ta)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 20Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 230 pF @ 25 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected