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Request for BSP373E6327

BSP373E6327

N-CHANNEL POWER MOSFET

Order Code:
CIS1461501
Manufacturer Part No:
BSP373E6327
Manufacturer:
Package / Case:
TO-261-4, TO-261AA
Detailed Description:
N-Channel 100 V 1.7A (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
Technical Datasheet:
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BSP373E6327 Information

More Information
Mfr Infineon Technologies
Series SIPMOS®
Package Bulk
Product Status Active
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4
Base Product Number IPB80N
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 1.8W (Ta)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected