In stock:
226
$0.69510
Standard Package:
5000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.69510 | |
| 10 | $0.60210 | |
| 30 | $0.54364 | |
| 100 | $0.48379 | |
| 500 | $0.45647 | |
| 1000 | $0.44479 |
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Request for BSZ110N06NS3GATMA1
BSZ110N06NS3GATMA1
MOSFET N-CH 60V 20A 8TSDSON
Order Code:
CIS1455094
Manufacturer Part No:
BSZ110N06NS3GATMA1
Manufacturer:
Package / Case:
8-PowerVDFN
Detailed Description:
N-Channel 60 V 20A (Tc) 2.1W (Ta), 50W (Tc) Surface Mount PG-TSDSON-8
Technical Datasheet:
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BSZ110N06NS3GATMA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | OptiMOS™ |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TSDSON-8 |
| Base Product Number | BSZ110 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 2.1W (Ta), 50W (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 23µA |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 30 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |