Out of stock
$0.12230
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.12230 | |
| 10 | $0.09961 | |
| 30 | $0.08994 | |
| 100 | $0.07777 | |
| 500 | $0.06894 | |
| 1000 | $0.06598 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for CSD25213W10
CSD25213W10
MOSFET P-CH 20V 1.6A 4DSBGA
Order Code:
CIS1093217
Manufacturer Part No:
CSD25213W10
Manufacturer:
Package / Case:
4-UFBGA, DSBGA
Detailed Description:
P-Channel 20 V 1.6A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)
Technical Datasheet:
Buy with Confidence
CSD25213W10 Information
| Mfr | Texas Instruments |
|---|---|
| Series | NexFET™ |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 4-UFBGA, DSBGA |
| Supplier Device Package | 4-DSBGA (1x1) |
| Base Product Number | CSD25213 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Power Dissipation (Max) | 1W (Ta) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 2.9 nC @ 4.5 V |
| Vgs (Max) | -6V |
| Input Capacitance (Ciss) (Max) @ Vds | 478 pF @ 10 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |