In stock:
5002
$0.00000
Standard Package:
800
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Request for FQB19N10LTM
FQB19N10LTM
MOSFET N-CH 100V 19A D2PAK
FQB19N10LTM Information
Mfr | onsemi |
---|---|
Series | QFET® |
Package | Tape & Reel (TR) |
Product Status | Obsolete |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | D²PAK (TO-263) |
Base Product Number | FQB1 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 3.75W (Ta), 75W (Tc) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 100mOhm @ 9.5A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |