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FQPF9N25CYDTU Information
Mfr | onsemi |
---|---|
Series | QFET® |
Package | Tube |
Product Status | Obsolete |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack, Formed Leads |
Supplier Device Package | TO-220F-3 (Y-Forming) |
Base Product Number | FQPF9 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 38W (Tc) |
Drain to Source Voltage (Vdss) | 250 V |
Current - Continuous Drain (Id) @ 25°C | 8.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 430mOhm @ 4.4A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 25 V |
FET Feature | - |
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