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Request for H7N1004FN-E

H7N1004FN-E

N-CHANNEL POWER MOSFET

Order Code:
CIS1343455
Manufacturer Part No:
H7N1004FN-E
Package / Case:
SC-100, SOT-669
Technical Datasheet:
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H7N1004FN-E Information

More Information
Mfr Renesas Electronics America Inc
Series *
Package Bulk
Product Status Active
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-100, SOT-669
Supplier Device Package LFPAK
Base Product Number RJK0330
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 50W (Tc)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3380 pF @ 10 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected