Out of stock
$15.87230
Standard Package:
1000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $15.87230 | |
| 200 | $6.14258 | |
| 500 | $5.92672 | |
| 1000 | $5.81879 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for IMBG65R057M1HXTMA1
IMBG65R057M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Order Code:
CIS1456093
Manufacturer Part No:
IMBG65R057M1HXTMA1
Manufacturer:
Package / Case:
TO-220-3
Technical Datasheet:
Buy with Confidence
IMBG65R057M1HXTMA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | * |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Base Product Number | IRF3205 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 170W (Tc) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 66A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3450 pF @ 25 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |