Out of stock
$6.90700
Standard Package:
1000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $6.90700 | |
| 200 | $2.67439 | |
| 500 | $2.58046 | |
| 1000 | $2.53280 |
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Request for IMBG65R260M1HXTMA1
IMBG65R260M1HXTMA1
SILICON CARBIDE MOSFET PG-TO263-
Order Code:
CIS1456226
Manufacturer Part No:
IMBG65R260M1HXTMA1
Manufacturer:
Package / Case:
TO-220-3
Buy with Confidence
IMBG65R260M1HXTMA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | * |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | PG-TO220-3 |
| Base Product Number | IPP65R |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 114W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 9.7A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 480µA |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1942 pF @ 400 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |