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$38.11020
Standard Package: 30
Quantity Unit Price
1 $38.11020
200 $14.74865
500 $14.23035
1000 $13.97501

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Request for IMW120R045M1XKSA1

IMW120R045M1XKSA1

SICFET N-CH 1.2KV 52A TO247-3

Order Code:
CIS1457513
Manufacturer Part No:
IMW120R045M1XKSA1
Manufacturer:
Package / Case:
TO-247-3
Detailed Description:
N-Channel 1200 V 52A (Tc) 228W (Tc) Through Hole PG-TO247-3-41
Technical Datasheet:
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IMW120R045M1XKSA1 Information

More Information
Mfr Infineon Technologies
Series CoolSiC™
Package Tube
Product Status Not For New Designs
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3-41
Base Product Number IMW120
Technology SiCFET (Silicon Carbide)
FET Type N-Channel
Power Dissipation (Max) 228W (Tc)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id 5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 15 V
Vgs (Max) +20V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 800 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) Not Applicable
REACH Status REACH Unaffected