In stock:
445
$29.05450
Standard Package:
30
| Quantity | Unit Price | |
|---|---|---|
| 1 | $29.05450 | |
| 200 | $11.24409 | |
| 500 | $10.84895 | |
| 1000 | $10.65429 |
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Request for IMW65R039M1HXKSA1
IMW65R039M1HXKSA1
SILICON CARBIDE MOSFET, PG-TO247
Order Code:
CIS1456222
Manufacturer Part No:
IMW65R039M1HXKSA1
Manufacturer:
Package / Case:
TO-247-3
Detailed Description:
N-Channel 650 V 46A (Tc) 176W (Tc) Through Hole PG-TO247-3-41
Technical Datasheet:
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IMW65R039M1HXKSA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | CoolSiC™ |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3-41 |
| Base Product Number | IMW65R |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 176W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 46A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 25A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 7.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 18 V |
| Vgs (Max) | +20V, -2V |
| Input Capacitance (Ciss) (Max) @ Vds | 1393 pF @ 400 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |