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In stock: 445
$29.05450
Standard Package: 30
Quantity Unit Price
1 $29.05450
200 $11.24409
500 $10.84895
1000 $10.65429

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Request for IMW65R039M1HXKSA1

IMW65R039M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Order Code:
CIS1456222
Manufacturer Part No:
IMW65R039M1HXKSA1
Manufacturer:
Package / Case:
TO-247-3
Detailed Description:
N-Channel 650 V 46A (Tc) 176W (Tc) Through Hole PG-TO247-3-41
Technical Datasheet:
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IMW65R039M1HXKSA1 Information

More Information
Mfr Infineon Technologies
Series CoolSiC™
Package Tube
Product Status Active
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3-41
Base Product Number IMW65R
Technology SiCFET (Silicon Carbide)
FET Type N-Channel
Power Dissipation (Max) 176W (Tc)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 50mOhm @ 25A, 18V
Vgs(th) (Max) @ Id 5.7V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 18 V
Vgs (Max) +20V, -2V
Input Capacitance (Ciss) (Max) @ Vds 1393 pF @ 400 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected