Out of stock
$14.49110
Standard Package:
30
| Quantity | Unit Price | |
|---|---|---|
| 1 | $14.49110 | |
| 200 | $5.60806 | |
| 500 | $5.41098 | |
| 1000 | $5.31389 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for IMZ120R350M1HXKSA1
IMZ120R350M1HXKSA1
SICFET N-CH 1.2KV 4.7A TO247-4
Order Code:
CIS1456303
Manufacturer Part No:
IMZ120R350M1HXKSA1
Manufacturer:
Package / Case:
TO-247-4
Detailed Description:
N-Channel 1200 V 4.7A (Tc) 60W (Tc) Through Hole PG-TO247-4-1
Technical Datasheet:
Buy with Confidence
IMZ120R350M1HXKSA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | CoolSiC™ |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-4 |
| Supplier Device Package | PG-TO247-4-1 |
| Base Product Number | IMZ120 |
| Technology | SiCFET (Silicon Carbide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 60W (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 2A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 5.3 nC @ 18 V |
| Vgs (Max) | +23V, -7V |
| Input Capacitance (Ciss) (Max) @ Vds | 182 pF @ 800 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| REACH Status | REACH Unaffected |