×

:

Not a valid Time
This is a required field.
Out of stock
$14.49110
Standard Package: 30
Quantity Unit Price
1 $14.49110
200 $5.60806
500 $5.41098
1000 $5.31389

* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.

Request for IMZ120R350M1HXKSA1

IMZ120R350M1HXKSA1

SICFET N-CH 1.2KV 4.7A TO247-4

Order Code:
CIS1456303
Manufacturer Part No:
IMZ120R350M1HXKSA1
Manufacturer:
Package / Case:
TO-247-4
Detailed Description:
N-Channel 1200 V 4.7A (Tc) 60W (Tc) Through Hole PG-TO247-4-1
Technical Datasheet:
Buy with Confidence

IMZ120R350M1HXKSA1 Information

More Information
Mfr Infineon Technologies
Series CoolSiC™
Package Tube
Product Status Active
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-4
Supplier Device Package PG-TO247-4-1
Base Product Number IMZ120
Technology SiCFET (Silicon Carbide)
FET Type N-Channel
Power Dissipation (Max) 60W (Tc)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 350mOhm @ 2A, 18V
Vgs(th) (Max) @ Id 5.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 5.3 nC @ 18 V
Vgs (Max) +23V, -7V
Input Capacitance (Ciss) (Max) @ Vds 182 pF @ 800 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) Not Applicable
REACH Status REACH Unaffected