Out of stock
$3.69630
Standard Package:
1
| Quantity | Unit Price | |
|---|---|---|
| 1 | $3.69630 | |
| 10 | $3.27123 | |
| 30 | $3.01877 | |
| 100 | $2.76446 | |
| 500 | $2.64655 | |
| 1000 | $2.59369 |
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Request for IPA60R190E6
IPA60R190E6
600V 0.19OHM N-CHANNEL MOSFET
Order Code:
CIS1461485
Manufacturer Part No:
IPA60R190E6
Manufacturer:
Package / Case:
TO-220-3 Full Pack
Detailed Description:
N-Channel 600 V 20.2A (Tc) 34W (Tc) Through Hole PG-TO220-3-111
Technical Datasheet:
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IPA60R190E6 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | CoolMOS™ |
| Package | Bulk |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | PG-TO220-3-111 |
| Base Product Number | IPB80N |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 34W (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 630µA |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 100 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 0000.00.0000 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |