Out of stock
$0.60140
Standard Package:
50
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.60140 | |
| 30 | $0.55696 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for IPAN60R360PFD7SXKSA1
IPAN60R360PFD7SXKSA1
MOSFET N-CH 650V 10A TO220
Order Code:
CIS1457644
Manufacturer Part No:
IPAN60R360PFD7SXKSA1
Manufacturer:
Package / Case:
TO-220-3 Full Pack
Detailed Description:
N-Channel 650 V 10A (Tc) 23W (Tc) Through Hole PG-TO220-FP
Technical Datasheet:
Buy with Confidence
IPAN60R360PFD7SXKSA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | CoolMOS™PFD7 |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | PG-TO220-FP |
| Base Product Number | IPAN60 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 23W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 2.9A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 140µA |
| Gate Charge (Qg) (Max) @ Vgs | 12.7 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 534 pF @ 400 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| REACH Status | REACH Unaffected |