Out of stock
$6.92100
Standard Package:
1
Quantity | Unit Price | |
---|---|---|
1 | $6.92100 | |
200 | $2.68120 | |
500 | $2.58430 | |
1000 | $2.54001 |
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Request for IPB019N08N5ATMA1
IPB019N08N5ATMA1
TRENCH 40<-<100V
Order Code:
CIS1457262
Manufacturer Part No:
IPB019N08N5ATMA1
Manufacturer:
Package / Case:
DirectFET™ Isometric ST
Technical Datasheet:
IPB019N08N5ATMA1 Information
Mfr | Infineon Technologies |
---|---|
Series | * |
Package | Bulk |
Product Status | Active |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | DirectFET™ Isometric ST |
Supplier Device Package | DIRECTFET™ ST |
Base Product Number | IPT65R105 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 81A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.5mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id | 2.45V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2420 pF @ 10 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 0000.00.0000 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | Vendor Undefined |
REACH Status | REACH Unaffected |