Out of stock
$19.02750
Standard Package:
1000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $19.02750 | |
| 200 | $7.36364 | |
| 500 | $7.10677 | |
| 1000 | $6.97929 |
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Request for IPB025N08N3 G
IPB025N08N3 G
N-CHANNEL POWER MOSFET
Order Code:
CIS1457374
Manufacturer Part No:
IPB025N08N3 G
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 80 V 120A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2
Technical Datasheet:
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IPB025N08N3 G Information
| Mfr | Infineon Technologies |
|---|---|
| Series | OptiMOS™3 |
| Package | Bulk |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | PG-TO263-3-2 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 300W (Tc) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 270µA |
| Gate Charge (Qg) (Max) @ Vgs | 206 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 14200 pF @ 40 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | Not applicable |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Affected |