Out of stock
$15.31110
Standard Package:
1000
Quantity | Unit Price | |
---|---|---|
1 | $15.31110 | |
200 | $5.92386 | |
500 | $5.72176 | |
1000 | $5.61611 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for IPB100N08S207ATMA1
IPB100N08S207ATMA1
MOSFET N-CH 75V 100A TO263-3
Order Code:
CIS1461108
Manufacturer Part No:
IPB100N08S207ATMA1
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 75 V 100A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2
Technical Datasheet:
IPB100N08S207ATMA1 Information
Mfr | Infineon Technologies |
---|---|
Series | OptiMOS™ |
Package | Tape & Reel (TR) |
Product Status | Not For New Designs |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | PG-TO263-3-2 |
Base Product Number | IPB100 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 300W (Tc) |
Drain to Source Voltage (Vdss) | 75 V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 6.8mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 25 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |