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In stock: 18
$3.38800
Standard Package: 1000
Quantity Unit Price
1 $3.38800
10 $2.98957
30 $2.74699
100 $2.41937

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Request for IPB180N10S403ATMA1

IPB180N10S403ATMA1

MOSFET N-CH 100V 180A TO263-7

Order Code:
CIS1456118
Manufacturer Part No:
IPB180N10S403ATMA1
Manufacturer:
Package / Case:
TO-263-7, D²Pak (6 Leads + Tab)
Detailed Description:
N-Channel 100 V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3
Technical Datasheet:
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IPB180N10S403ATMA1 Information

More Information
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel (TR)
Product Status Active
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Supplier Device Package PG-TO263-7-3
Base Product Number IPB180
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 250W (Tc)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 180µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10120 pF @ 25 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected