Out of stock
$10.42800
Standard Package:
1000
Quantity | Unit Price | |
---|---|---|
1 | $10.42800 | |
200 | $4.03564 | |
500 | $3.89382 | |
1000 | $3.82499 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for IPB60R070CFD7ATMA1
IPB60R070CFD7ATMA1
MOSFET N-CH 650V 31A TO263-3-2
Order Code:
CIS1461634
Manufacturer Part No:
IPB60R070CFD7ATMA1
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 650 V 31A (Tc) 156W (Tc) Surface Mount PG-TO263-3-2
Technical Datasheet:
IPB60R070CFD7ATMA1 Information
Mfr | Infineon Technologies |
---|---|
Series | CoolMOS™ CFD7 |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | PG-TO263-3-2 |
Base Product Number | IPB60R070 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 156W (Tc) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 70mOhm @ 15.1A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 760µA |
Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2721 pF @ 400 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |