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$4.88100
Standard Package: 1000
Quantity Unit Price
1 $4.88100
10 $4.29089
30 $3.93116
100 $3.63000

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Request for IPB60R099C6ATMA1

IPB60R099C6ATMA1

MOSFET N-CH 600V 37.9A D2PAK

Order Code:
CIS1461638
Manufacturer Part No:
IPB60R099C6ATMA1
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 600 V 37.9A (Tc) 278W (Tc) Surface Mount PG-TO263-3
Technical Datasheet:
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IPB60R099C6ATMA1 Information

More Information
Mfr Infineon Technologies
Series CoolMOS™
Package Tape & Reel (TR)
Product Status Not For New Designs
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3
Base Product Number IPB60R099
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 278W (Tc)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 37.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 18.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs 119 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2660 pF @ 100 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected