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$4.25300
Standard Package: 1000
Quantity Unit Price
1 $4.25300
200 $1.64761
500 $1.58850
1000 $1.56000

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Request for IPB60R299CPAATMA1

IPB60R299CPAATMA1

MOSFET N-CH 600V 11A TO263-3

Order Code:
CIS1458068
Manufacturer Part No:
IPB60R299CPAATMA1
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 600 V 11A (Tc) 96W (Tc) Surface Mount PG-TO263-3-2
Technical Datasheet:
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IPB60R299CPAATMA1 Information

More Information
Mfr Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS™
Package Tape & Reel (TR)
Product Status Active
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3-2
Base Product Number IPB60R299
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 96W (Tc)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 299mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 100 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected