Out of stock
$3.70290
Standard Package:
1000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $3.70290 | |
| 200 | $1.43561 | |
| 500 | $1.38303 | |
| 1000 | $1.35970 |
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Request for IPB65R660CFDAATMA1
IPB65R660CFDAATMA1
MOSFET N-CH 650V 6A D2PAK
Order Code:
CIS1455771
Manufacturer Part No:
IPB65R660CFDAATMA1
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 650 V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO263-3
Technical Datasheet:
Buy with Confidence
IPB65R660CFDAATMA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | Automotive, AEC-Q101, CoolMOS™ |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | PG-TO263-3 |
| Base Product Number | IPB65R660 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 62.5W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 660mOhm @ 3.2A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 543 pF @ 100 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |