In stock:
5
$1.18520
Standard Package:
1000
Quantity | Unit Price | |
---|---|---|
1 | $1.18520 | |
10 | $1.03397 | |
30 | $0.94449 | |
100 | $0.85346 | |
500 | $0.81186 | |
1000 | $0.79302 |
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Request for IPB80N06S4L07ATMA2
IPB80N06S4L07ATMA2
MOSFET N-CH 60V 80A TO263-3
Order Code:
CIS1461468
Manufacturer Part No:
IPB80N06S4L07ATMA2
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 60 V 80A (Tc) 79W (Tc) Surface Mount PG-TO263-3-2
Technical Datasheet:
IPB80N06S4L07ATMA2 Information
Mfr | Infineon Technologies |
---|---|
Series | Automotive, AEC-Q101, OptiMOS™ |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | PG-TO263-3-2 |
Base Product Number | IPB80N |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 79W (Tc) |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6.7mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 40µA |
Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 5680 pF @ 25 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |