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In stock: 18
$0.32580
Standard Package: 2500
Quantity Unit Price
1 $0.32580
30 $0.30202

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Request for IPD30N03S4L09ATMA1

IPD30N03S4L09ATMA1

MOSFET N-CH 30V 30A TO252-3

Order Code:
CIS1457985
Manufacturer Part No:
IPD30N03S4L09ATMA1
Manufacturer:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Detailed Description:
N-Channel 30 V 30A (Tc) 42W (Tc) Surface Mount PG-TO252-3-11
Technical Datasheet:
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IPD30N03S4L09ATMA1 Information

More Information
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
Product Status Active
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3-11
Base Product Number IPD30N03
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 42W (Tc)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 13µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 1520 pF @ 15 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected