Out of stock
$5.07860
Standard Package:
2500
Quantity | Unit Price | |
---|---|---|
1 | $5.07860 | |
200 | $1.96897 | |
500 | $1.90498 | |
1000 | $1.86791 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for IPD50N03S207ATMA1
IPD50N03S207ATMA1
MOSFET N-CH 30V 50A TO252-3
Order Code:
CIS1461232
Manufacturer Part No:
IPD50N03S207ATMA1
Manufacturer:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Detailed Description:
N-Channel 30 V 50A (Tc) 136W (Tc) Surface Mount PG-TO252-3-11
Technical Datasheet:
IPD50N03S207ATMA1 Information
Mfr | Infineon Technologies |
---|---|
Series | OptiMOS™ |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | PG-TO252-3-11 |
Base Product Number | IPD50N03 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 136W (Tc) |
Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 7.3mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 4V @ 85µA |
Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |