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$1.72660
Standard Package: 2500
Quantity Unit Price
1 $1.72660
10 $1.44810
30 $1.30876
100 $1.16960
500 $1.08845
1000 $1.04632

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Request for IPD60R1K4C6

IPD60R1K4C6

MOSFET N-CH 600V 3.2A TO252-3

Order Code:
CIS1454467
Manufacturer Part No:
IPD60R1K4C6
Manufacturer:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Detailed Description:
N-Channel 600 V 3.2A (Tc) 28.4W (Tc) Surface Mount PG-TO252-3
Technical Datasheet:
Buy with Confidence

IPD60R1K4C6 Information

More Information
Mfr Infineon Technologies
Series CoolMOS™
Package Tape & Reel (TR)
Product Status Discontinued
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3
Base Product Number IPD60R
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 28.4W (Tc)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 100 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected