×

:

Not a valid Time
This is a required field.
Out of stock
$1.07360
Standard Package: 2500
Quantity Unit Price
1 $1.07360
200 $0.41516
500 $0.40024
1000 $0.39401

* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.

Request for IPD65R1K4C6ATMA1

IPD65R1K4C6ATMA1

MOSFET N-CH 650V 3.2A TO252-3

Order Code:
CIS1461329
Manufacturer Part No:
IPD65R1K4C6ATMA1
Manufacturer:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Detailed Description:
N-Channel 650 V 3.2A (Tc) 28W (Tc) Surface Mount PG-TO252-3
Technical Datasheet:
Buy with Confidence

IPD65R1K4C6ATMA1 Information

More Information
Mfr Infineon Technologies
Series CoolMOS™ C6
Package Tape & Reel (TR)
Product Status Active
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3
Base Product Number IPD65R1
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 28W (Tc)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 100 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected