Out of stock
$1.40080
Standard Package:
2500
Quantity | Unit Price | |
---|---|---|
1 | $1.40080 | |
10 | $1.18886 | |
30 | $1.07231 | |
100 | $0.94106 | |
500 | $0.88208 | |
1000 | $0.85603 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for IPD65R380E6ATMA1
IPD65R380E6ATMA1
MOSFET N-CH 650V 10.6A TO252-3
Order Code:
CIS1456366
Manufacturer Part No:
IPD65R380E6ATMA1
Manufacturer:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Detailed Description:
N-Channel 650 V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO252-3
Technical Datasheet:
IPD65R380E6ATMA1 Information
Mfr | Infineon Technologies |
---|---|
Series | CoolMOS™ E6 |
Package | Tape & Reel (TR) |
Product Status | Not For New Designs |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | PG-TO252-3 |
Base Product Number | IPD65R380 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 83W (Tc) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 10.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 380mOhm @ 3.2A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 320µA |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 100 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |