Out of stock
$1.78800
Standard Package:
1
Quantity | Unit Price | |
---|---|---|
1 | $1.78800 | |
200 | $0.69213 | |
500 | $0.66764 | |
1000 | $0.65602 |
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Request for IPD65R660CFD
IPD65R660CFD
IPD65R660 - 650V AND 700V COOLMO
Order Code:
CIS1454540
Manufacturer Part No:
IPD65R660CFD
Manufacturer:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Detailed Description:
N-Channel 650 V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO252-3-313
Technical Datasheet:
IPD65R660CFD Information
Mfr | Infineon Technologies |
---|---|
Series | CoolMOS™ CFD2 |
Package | Bulk |
Product Status | Active |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | PG-TO252-3-313 |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 62.5W (Tc) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 660mOhm @ 2.1A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 615 pF @ 100 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |