Out of stock
$0.84170
Standard Package:
2500
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.84170 | |
| 10 | $0.73539 | |
| 30 | $0.67176 | |
| 100 | $0.60771 | |
| 500 | $0.57800 | |
| 1000 | $0.56503 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for IPD80R1K4CEATMA1
IPD80R1K4CEATMA1
MOSFET N-CH 800V 3.9A TO252-3
Order Code:
CIS1461781
Manufacturer Part No:
IPD80R1K4CEATMA1
Manufacturer:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Detailed Description:
N-Channel 800 V 3.9A (Tc) 63W (Tc) Surface Mount PG-TO252-3
Technical Datasheet:
Buy with Confidence
IPD80R1K4CEATMA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | CoolMOS™ |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | PG-TO252-3 |
| Base Product Number | IPD80R1 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 63W (Tc) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.3A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 240µA |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 100 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |