Out of stock
$2.03220
Standard Package:
50
| Quantity | Unit Price | |
|---|---|---|
| 1 | $2.03220 | |
| 200 | $0.78788 | |
| 500 | $0.75862 | |
| 1000 | $0.74500 |
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Request for IPI086N10N3GXKSA1
IPI086N10N3GXKSA1
MOSFET N-CH 100V 80A TO262-3
Order Code:
CIS1461680
Manufacturer Part No:
IPI086N10N3GXKSA1
Manufacturer:
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Detailed Description:
N-Channel 100 V 80A (Tc) 125W (Tc) Through Hole PG-TO262-3
Technical Datasheet:
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IPI086N10N3GXKSA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | OptiMOS™ |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package | PG-TO262-3 |
| Base Product Number | IPI086 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 125W (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 8.6mOhm @ 73A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 75µA |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3980 pF @ 50 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |