Out of stock
$8.61710
Standard Package:
500
| Quantity | Unit Price | |
|---|---|---|
| 1 | $8.61710 | |
| 200 | $3.33482 | |
| 500 | $3.21935 | |
| 1000 | $3.16161 |
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Request for IPI50N10S3L16AKSA1
IPI50N10S3L16AKSA1
MOSFET N-CH 100V 50A TO262-3
Order Code:
CIS1461158
Manufacturer Part No:
IPI50N10S3L16AKSA1
Manufacturer:
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Detailed Description:
N-Channel 100 V 50A (Tc) 100W (Tc) Through Hole PG-TO262-3
Technical Datasheet:
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IPI50N10S3L16AKSA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | OptiMOS™ |
| Package | Tube |
| Product Status | Not For New Designs |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package | PG-TO262-3 |
| Base Product Number | IPI50N10 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 100W (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 15.7mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 60µA |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4180 pF @ 25 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |