Out of stock
$12.61480
Standard Package:
1
Quantity | Unit Price | |
---|---|---|
1 | $12.61480 | |
200 | $4.88824 | |
500 | $4.71667 | |
1000 | $4.63089 |
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Request for IPI65R190C
IPI65R190C
N-CHANNEL POWER MOSFET
Order Code:
CIS1461432
Manufacturer Part No:
IPI65R190C
Manufacturer:
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Detailed Description:
N-Channel 650 V 20.2A (Tc) 151W (Tc) Through Hole PG-TO262-3-1
Technical Datasheet:
IPI65R190C Information
Mfr | Infineon Technologies |
---|---|
Series | CoolMOS™ |
Package | Bulk |
Product Status | Active |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package | PG-TO262-3-1 |
Base Product Number | IPF039N |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 151W (Tc) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 730µA |
Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 100 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | Not applicable |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | Vendor Undefined |