Out of stock
$0.66190
Standard Package:
3000
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.66190 | |
| 200 | $0.25622 | |
| 500 | $0.24755 | |
| 1000 | $0.24298 |
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Request for IPN60R2K0PFD7SATMA1
IPN60R2K0PFD7SATMA1
MOSFET N-CH 650V 3A SOT223
Order Code:
CIS1456016
Manufacturer Part No:
IPN60R2K0PFD7SATMA1
Manufacturer:
Package / Case:
TO-261-3
Detailed Description:
N-Channel 650 V 3A (Tc) 6W (Tc) Surface Mount PG-SOT223-3-1
Buy with Confidence
IPN60R2K0PFD7SATMA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | CoolMOS™PFD7 |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-3 |
| Supplier Device Package | PG-SOT223-3-1 |
| Base Product Number | IPN60R2 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 6W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 30µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.8 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 134 pF @ 400 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |