Out of stock
$0.64490
Standard Package:
3000
Quantity | Unit Price | |
---|---|---|
1 | $0.64490 | |
10 | $0.56209 | |
30 | $0.51037 | |
100 | $0.45730 | |
500 | $0.41332 | |
1000 | $0.40300 |
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Request for IPN60R360PFD7SATMA1
IPN60R360PFD7SATMA1
MOSFET N-CH 650V 10A SOT223
Order Code:
CIS1456294
Manufacturer Part No:
IPN60R360PFD7SATMA1
Manufacturer:
Package / Case:
TO-261-3
Detailed Description:
N-Channel 650 V 10A (Tc) 7W (Tc) Surface Mount PG-SOT223-3-1
IPN60R360PFD7SATMA1 Information
Mfr | Infineon Technologies |
---|---|
Series | CoolMOS™PFD7 |
Package | Tape & Reel (TR) |
Product Status | Active |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-261-3 |
Supplier Device Package | PG-SOT223-3-1 |
Base Product Number | IPN60R |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Power Dissipation (Max) | 7W (Tc) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 360mOhm @ 2.9A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 140µA |
Gate Charge (Qg) (Max) @ Vgs | 12.7 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 534 pF @ 400 V |
FET Feature | - |
ECCN | EAR99 |
---|---|
HTSUS | 8541.29.0095 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |