In stock:
15
$3.32300
Standard Package:
50
| Quantity | Unit Price | |
|---|---|---|
| 1 | $3.32300 | |
| 10 | $2.92125 | |
| 30 | $2.67668 | |
| 100 | $2.47132 |
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Request for IPP60R199CPXKSA1
IPP60R199CPXKSA1
MOSFET N-CH 650V 16A TO220-3
Order Code:
CIS1456264
Manufacturer Part No:
IPP60R199CPXKSA1
Manufacturer:
Package / Case:
TO-220-3
Detailed Description:
N-Channel 650 V 16A (Tc) 139W (Tc) Through Hole PG-TO220-3
Technical Datasheet:
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IPP60R199CPXKSA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | CoolMOS™ |
| Package | Tube |
| Product Status | Not For New Designs |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | PG-TO220-3 |
| Base Product Number | IPP60R199 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 139W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 199mOhm @ 9.9A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 660µA |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1520 pF @ 100 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |