Out of stock
$0.80100
Standard Package:
1500
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.80100 | |
| 200 | $0.31007 | |
| 500 | $0.29933 | |
| 1500 | $0.29501 |
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Request for IPU80R3K3P7AKMA1
IPU80R3K3P7AKMA1
MOSFET N-CH 800V 1.9A TO251-3
Order Code:
CIS1461342
Manufacturer Part No:
IPU80R3K3P7AKMA1
Manufacturer:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Detailed Description:
N-Channel 800 V 1.9A (Tc) 18W (Tc) Through Hole PG-TO251-3
Technical Datasheet:
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IPU80R3K3P7AKMA1 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | CoolMOS™ P7 |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package | PG-TO251-3 |
| Base Product Number | IPU80R3 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 18W (Tc) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.3Ohm @ 590mA, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 30µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.8 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 500 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |