Out of stock
$111.84760
Standard Package:
1
| Quantity | Unit Price | |
|---|---|---|
| 1 | $111.84760 | |
| 200 | $43.28502 | |
| 500 | $41.76389 | |
| 1000 | $41.01451 |
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Request for IPW65R019C7
IPW65R019C7
75A, 650V, 0.019OHM, N-CHANNEL M
Order Code:
CIS1460953
Manufacturer Part No:
IPW65R019C7
Manufacturer:
Package / Case:
TO-247-3
Detailed Description:
N-Channel 650 V 75A (Tc) 446W (Tc) Through Hole PG-TO247-3
Technical Datasheet:
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IPW65R019C7 Information
| Mfr | Infineon Technologies |
|---|---|
| Series | CoolMOS™ |
| Package | Bulk |
| Product Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3 |
| Base Product Number | IRF3007 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 446W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 58.3A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 2.92mA |
| Gate Charge (Qg) (Max) @ Vgs | 215 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9900 pF @ 400 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 0000.00.0000 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |