In stock:
229
$0.93790
Standard Package:
100
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.93790 | |
| 10 | $0.79084 | |
| 50 | $0.71731 | |
| 100 | $0.64528 | |
| 500 | $0.55824 | |
| 1000 | $0.53573 |
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Request for IRF1010EPBF
IRF1010EPBF
MOSFET N-CH 60V 84A TO220AB
Order Code:
CIS1456350
Manufacturer Part No:
IRF1010EPBF
Manufacturer:
Package / Case:
TO-220-3
Detailed Description:
N-Channel 60 V 84A (Tc) 200W (Tc) Through Hole TO-220AB
Technical Datasheet:
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IRF1010EPBF Information
| Mfr | Infineon Technologies |
|---|---|
| Series | HEXFET® |
| Package | Tube |
| Product Status | Active |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| Base Product Number | IRF1010 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 200W (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 84A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3210 pF @ 25 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |