In stock:
58
$0.79470
Standard Package:
800
| Quantity | Unit Price | |
|---|---|---|
| 1 | $0.79470 | |
| 10 | $0.67383 | |
| 30 | $0.60795 | |
| 100 | $0.53285 | |
| 500 | $0.49899 | |
| 800 | $0.48429 |
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Request for IRF630NSTRLPBF
IRF630NSTRLPBF
MOSFET N-CH 200V 9.3A D2PAK
Order Code:
CIS1461770
Manufacturer Part No:
IRF630NSTRLPBF
Manufacturer:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Detailed Description:
N-Channel 200 V 9.3A (Tc) 82W (Tc) Surface Mount D2PAK
Technical Datasheet:
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IRF630NSTRLPBF Information
| Mfr | Infineon Technologies |
|---|---|
| Series | HEXFET® |
| Package | Tape & Reel (TR) |
| Product Status | Not For New Designs |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D2PAK |
| Base Product Number | IRF630 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 82W (Tc) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 5.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 575 pF @ 25 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |