In stock:
1
$1.38090
Standard Package:
50
| Quantity | Unit Price | |
|---|---|---|
| 1 | $1.38090 | |
| 10 | $1.20194 | |
| 50 | $1.09050 | |
| 100 | $0.97533 | |
| 500 | $0.88143 | |
| 1000 | $0.85892 |
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Request for IRF640NLPBF
IRF640NLPBF
MOSFET N-CH 200V 18A TO262
Order Code:
CIS1455766
Manufacturer Part No:
IRF640NLPBF
Manufacturer:
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Detailed Description:
N-Channel 200 V 18A (Tc) 150W (Tc) Through Hole TO-262
Technical Datasheet:
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IRF640NLPBF Information
| Mfr | Infineon Technologies |
|---|---|
| Series | HEXFET® |
| Package | Tube |
| Product Status | Not For New Designs |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package | TO-262 |
| Base Product Number | IRF640 |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Power Dissipation (Max) | 150W (Tc) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 25 V |
| FET Feature | - |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |