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Standard Package: 1000

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IRFB59N10DPBF

MOSFET N-CH 100V 59A TO220AB

Order Code:
CIS1460874
Manufacturer Part No:
IRFB59N10DPBF
Manufacturer:
Package / Case:
TO-220-3
Detailed Description:
N-Channel 100 V 59A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-220AB
Technical Datasheet:
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IRFB59N10DPBF Information

More Information
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Base Product Number IRFU024
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 35.4A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2450 pF @ 25 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected