Out of stock
$2,552.63160
Standard Package:
1
| Quantity | Unit Price | |
|---|---|---|
| 1 | $2,552.63160 | |
| 200 | $987.86843 | |
| 500 | $953.15264 | |
| 1000 | $936.05001 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for MSCSM120AM042CD3AG
MSCSM120AM042CD3AG
PM-MOSFET-SIC-SBD~-D3
Order Code:
CIS1300148
Manufacturer Part No:
MSCSM120AM042CD3AG
Manufacturer:
Package / Case:
Module
Detailed Description:
Mosfet Array 2 N Channel (Phase Leg) 1200V (1.2kV) 495A (Tc) 2.031kW (Tc) Chassis Mount D3
Technical Datasheet:
Buy with Confidence
MSCSM120AM042CD3AG Information
| Mfr | Microchip Technology |
|---|---|
| Series | - |
| Package | Box |
| Product Status | Active |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | D3 |
| Base Product Number | MSCSM120 |
| Power - Max | 2.031kW (Tc) |
| FET Type | 2 N Channel (Phase Leg) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 495A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 240A, 20V |
| Vgs(th) (Max) @ Id | 2.8V @ 6mA |
| Gate Charge (Qg) (Max) @ Vgs | 1392nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 18.1pF @ 1000V |
| FET Feature | Silicon Carbide (SiC) |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.29.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |