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Request for MTB16N25ET4

MTB16N25ET4

N-CHANNEL POWER MOSFET

Order Code:
CIS1195080
Manufacturer Part No:
MTB16N25ET4
Manufacturer:
Package / Case:
TO-261-4, TO-261AA
Technical Datasheet:
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MTB16N25ET4 Information

More Information
Mfr onsemi
Series *
Package Bulk
Product Status Active
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223 (TO-261)
Base Product Number NVD6495
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 2W (Tc)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.1 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 476 pF @ 25 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Affected