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In stock: 141600
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Standard Package: 800

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Request for MTB29N15ET4

MTB29N15ET4

N-CHANNEL POWER MOSFET

Order Code:
CIS1194989
Manufacturer Part No:
MTB29N15ET4
Manufacturer:
Package / Case:
TO-220-3
Technical Datasheet:
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MTB29N15ET4 Information

More Information
Mfr onsemi
Series *
Package Bulk
Product Status Active
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Base Product Number FCP600
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Power Dissipation (Max) 54W (Tc)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 465 pF @ 400 V
FET Feature -
More Information
ECCN EAR99
HTSUS 8541.29.0095
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Affected