In stock:
6440
$0.02460
Standard Package:
8000
| Quantity | Unit Price | |
|---|---|---|
| 20 | $0.02460 | |
| 200 | $0.01991 | |
| 600 | $0.01733 | |
| 2000 | $0.01582 | |
| 8000 | $0.01446 | |
| 16000 | $0.01370 |
* For price, quantity, etc. inquiries, please log in to add products to your quote cart, or submit without logging in by filling out the form below.
Request for RN1102MFV,L3F
RN1102MFV,L3F
TRANS PREBIAS NPN 50V 0.1A VESM
Order Code:
CIS1164864
Manufacturer Part No:
RN1102MFV,L3F
Manufacturer:
Package / Case:
SOT-723
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Technical Datasheet:
Buy with Confidence
RN1102MFV,L3F Information
| Mfr | Toshiba Semiconductor and Storage |
|---|---|
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Supplier Device Package | VESM |
| Base Product Number | RN1102 |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| ECCN | EAR99 |
|---|---|
| HTSUS | 8541.21.0095 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |